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this is information on a product in full production. june 2013 docid024360 rev 3 1/23 23 stgb20v60df, stgp20v60df, STGW20V60DF, stgwt20v60df 600 v, 20 a very high speed trench gate field-stop igbt datasheet - production data figure 1. internal schematic diagram features ? maximum junction temperature: t j = 175 c ? very high speed switching series ? tail-less switching off ? low saturation voltage: v ce(sat) = 1.8 v (typ.) @ i c = 20 a ? tight parameters distribution ? safe paralleling ? low thermal resistance ? very fast soft recovery antiparallel diode ? lead free package applications ? photovoltaic inverters ? uninterruptible power supply ? welding ? power factor correction ? very high frequency converters description this device is an igbt developed using an advanced proprietary trench gate and field stop structure. the device is part of the "v" series of igbts, which represent an optimum compromise between conduction and switching losses to maximize the efficiency of very high frequency converters. furthermore, a positive v ce(sat) temperature coefficient and very tight parameter distribution result in safer paralleling operation. to-247 to-3p to-220 d2pak 1 2 3 tab 1 2 3 1 2 3 tab 1 3 tab table 1. device summary order code marking package packaging stgb20v60df gb20v60df d2pak tape and reel stgp20v60df gp20v60df to-220 tube STGW20V60DF gw20v60df to-247 tube stgwt20v60df gwt20v60df to-3p tube www.st.com
contents stgb20v60df, stgp20v60df, STGW20V60DF, stgwt20v60df 2/23 docid024360 rev 3 contents 1 electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 2 electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4 2.1 electrical characteristics (curves) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6 3 test circuits . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11 4 package mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12 5 packing mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 20 6 revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 22
docid024360 rev 3 3/23 stgb20v60df, stgp20v60df, STGW20V60DF, stgwt20v60df electrical ratings 1 electrical ratings table 2. absolute maximum ratings symbol parameter value unit v ces collector-emitter voltage (v ge = 0) 600 v i c continuous collector current at t c = 25 c 40 a i c continuous collector current at t c = 100 c 20 a i cp (1) 1. pulse width limited by maximum juncti on temperature and turn-off within rbsoa pulsed collector current 80 a v ge gate-emitter voltage 20 v i f continuous forward current at t c = 25 c 40 a i f continuous forward current at t c = 100 c 20 a i fp(1) pulsed forward current 80 a p tot total dissipation at t c = 25 c 167 w t stg storage temperature range - 55 to 150 c t j operating junction temperature - 55 to 175 c table 3. thermal data symbol parameter value unit r thjc thermal resistance junction-case igbt 0.9 c/w r thjc thermal resistance junction-case diode 2.08 c/w r thja thermal resistance junction-ambient 50 c/w
electrical characteristics stgb20v60df, stgp20v60df, STGW20V60DF, stgwt20v60df 4/23 docid024360 rev 3 2 electrical characteristics t j = 25 c unless otherwise specified. table 4. static characteristics symbol parameter test conditions min. typ. max. unit v (br)ces collector-emitter breakdown voltage (v ge = 0) i c = 2 ma 600 v v ce(sat) collector-emitter saturation voltage v ge = 15 v, i c = 20 a 1.8 2.2 v v ge = 15 v, i c = 20 a t j = 125 c 2.15 v ge = 15 v, i c = 20 a t j = 175 c 2.3 v f forward on-voltage i f = 20 a 1.7 2.2 v i f = 20 a t j = 125 c 1.55 v i f = 20 a t j = 175 c 1.3 v v ge(th) gate threshold voltage v ce = v ge , i c = 1 ma 5 6 7 v i ces collector cut-off current (v ge = 0) v ce = 600 v 25 a i ges gate-emitter leakage current (v ce = 0) v ge = 20 v 250 na table 5. dynamic characteristics symbol parameter test conditions min. typ. max. unit c ies input capacitance v ce = 25 v, f = 1 mhz, v ge = 0 -2800- pf c oes output capacitance - 110 - pf c res reverse transfer capacitance -64-pf q g total gate charge v cc = 480 v, i c = 20 a, v ge = 15 v, see figure 29 -116-nc q ge gate-emitter charge - 24 - nc q gc gate-collector charge - 50 - nc
docid024360 rev 3 5/23 stgb20v60df, stgp20v60df, STGW20V60DF, stgwt20v60df electrical characteristics table 6. igbt switching characteristics (inductive load) symbol parameter test conditions min. typ. max. unit t d(on) turn-on delay time v ce = 400 v, i c = 20 a, v ge = 15 v , see figure 28 -38-ns t r current rise time - 10 - ns (di/dt) on turn-on current slope - 1556 - a/ s t d(off) turn-off delay time - 149 - ns t f current fall time - 15 - ns e on (1) 1. energy losses include reverse recovery of the diode. turn-on switching losses - 200 - j e off (2) 2. turn-off losses include also the tail of the collector current. turn-off switching losses - 130 - j e ts total switching losses - 330 - j t d(on) turn-on delay time v ce = 400 v, i c = 20 a, di/dt = 1000 a/ s, v ge = 15 v , t j = 175 c, see figure 28 -37-ns t r current rise time - 12 - ns (di/dt) on turn-on current slope - 1340 - a/ s t d(off) turn-off delay time - 150 - ns t f current fall time - 23 - ns e on (1) turn-on switching losses - 430 - j e off (2) turn-off switching losses - 210 - j e ts total switching losses - 640 - j table 7. diode switching characteristics (inductive load) symbol parameter test conditions min. typ. max. unit t rr reverse recovery time i f = 20 a, v r = 400 v, v ge = 15 v, see figure 28 di/dt = 1000 a/ s -40-ns q rr reverse recovery charge - 320 - nc i rrm reverse recovery current - 16 - a di rr/ /dt peak rate of fall of reverse recovery current during t b - 910 - a/ s e rr reverse recovery energy - 115 - j t rr reverse recovery time i f = 20 a, v r = 400 v, v ge = 15 v, t j = 175 c, see figure 28 di/dt = 1000 a/ s -72-ns q rr reverse recovery charge - 930 - nc i rrm reverse recovery current - 26 - a di rr/ /dt peak rate of fall of reverse recovery current during t b - 530 - a/ s e rr reverse recovery energy - 307 - j
electrical characteristics stgb20v60df, stgp20v60df, STGW20V60DF, stgwt20v60df 6/23 docid024360 rev 3 2.1 electrical characteristics (curves) figure 2. power dissipation vs. case temperature figure 3. collector current vs. case temperature figure 4. output characteristics (t j = 25 c) figure 5. output characteristics (t j = 175 c) figure 6. v ce(sat) vs. junction temperature figure 7. v ce(sat) vs. collector current am17175v1 0 20 40 60 80 100 120 140 160 0 255075100125150175 p tot (w) t c (c) am17174v1 0 5 10 15 20 25 30 35 40 0 25 50 75 100 125 150 175 i c (a) t c (c) am17171v1 9 v 11 v 13 v 15 v 0 10 20 30 40 50 60 70 01234 ic (a) v ce (v) v ge =7 v am17172v1 9 v 11 v 13 v 15 v 0 10 20 30 40 50 60 70 01234 ic (a) v ce (v) v ge =7 v am17176v1 1.2 1.4 1.6 1.8 2.0 2.2 2.4 2.6 2.8 -50 -25 0 25 50 75 100 125 150 175 v ce(sat) (v) t j (oc) i c 40a i c = 20a i c = 10a v ge = 15v am17177v1 0.8 1.2 1.6 2.0 2.4 2.8 3.2 3.6 4.0 0 1020304050607080 v ce (v) i c (a) t j = 25c t j = - 40c t j = 175c v ge =15v
docid024360 rev 3 7/23 stgb20v60df, stgp20v60df, STGW20V60DF, stgwt20v60df electrical characteristics figure 8. collector current vs. switching frequency figure 9. forward bias safe operating area figure 10. transfer characteristics figure 11. diode v f vs. forward current figure 12. normalized v ge(th) vs. junction temperature figure 13. normalized bv ces vs. junction temperature am17194v1 0 10 20 30 40 50 60 70 1 10 f (khz) ic [a] rectangular current shape, (duty cycle=0.5, vcc= 400v rg=4.7ohm,vge=0/15v, tj=175c) tc = 100c tc = 80c am17179v1 0.01 0.1 1 10 110100 i c (a) v ce (v) 10 s 100 s 1 ms (single pulse t c =25 c, t j <=175 c; v ge =15 v) am17173v1 t j =175c 10 20 30 40 50 60 70 7891011 i c (a) v ge (v) -40c 25c am17178v1 0.8 1.2 1.6 2 2.4 10 15 20 25 30 35 v f (v) i f (a) t =175 c 25c -40c j am17181v1 0.6 0.7 0.8 0.9 1.0 1.1 -50 0 50 100 150 v ge(th) norm (v) t j (oc) v = 5v ge am17180v1 0.9 1.0 1.1 -50 0 50 100 150 bv ces norm (v) t j (oc)
electrical characteristics stgb20v60df, stgp20v60df, STGW20V60DF, stgwt20v60df 8/23 docid024360 rev 3 figure 14. capacitance variations figure 15. gate charge vs. gate-emitter voltage am17183v1 10 100 1000 0.1 1 10 c (pf) v ce (v) c res c oes c ies am17182v1 0 2 4 6 8 10 12 14 16 0255075100125 v ge (v) qg (nc) figure 16. switching losses vs. collector current figure 17. switching losses vs. gate resistance figure 18. switching losses vs. junction temperature figure 19. switching losses vs. collector emitter voltage am17185v1 0 200 400 600 800 1000 010203040 e (j) ic (a) e on e off v cc 400v, v ge = 15v, rg=10, t j = 175c am17184v1 100 300 500 700 010203040 e (j) r g () e on e off v cc 400v, v ge = 15v, i c =20 a, t j = 175c am17186v1 100 150 200 250 300 350 400 450 0 25 50 75 100 125 150 175 e (j) t j (oc) e on e off v cc 400v, v ge = 15v, i c = 20 a, rg= 10 am17187v1 100 200 300 400 500 600 150 200 250 300 350 400 450 e (j) vce (v) e on e off v ge = 15v, t j = 175 c i c = 20 a, rg= 10
docid024360 rev 3 9/23 stgb20v60df, stgp20v60df, STGW20V60DF, stgwt20v60df electrical characteristics figure 20. switching times vs. collector current figure 21. switching times vs. gate resistance am17188v1 1 10 100 010203040 t s (ns) ic (a) v cc = 400v, v ge = 15v, tj =175 c, rg = 10 t doff t don t r t f am17189v1 t f 1 10 100 0 10203040 t s (ns) rg () v cc = 400v, v ge = 15v, tj=175 c ic = 40 a t doff t don t r figure 22. reverse recovery current vs. diode current slope figure 23. reverse recovery time vs. diode current slope figure 24. reverse recovery charge vs. diode current slope figure 25. reverse recovery energy vs. diode current slope am17190v1 0 10 20 30 40 50 0 500 1000 1500 2000 2500 i rm (a) di/dt (a/s) v r = 400v, i f = 20 a 25c 175 c am17191v1 0 20 40 60 80 100 120 140 160 180 0 500 1000 1500 2000 2500 trr (s) di/dt (a/s) v r = 400v, i f = 20 a 25 oc 175 oc am17192v1 0 200 400 600 800 1000 1200 1400 0 500 1000 1500 2000 2500 qrr (nc) di/dt (a/s) v r = 400v, i f = 40 a 25c 175c am17193v1 0 100 200 300 400 500 600 700 800 0 500 1000 1500 2000 2500 err (j) di/dt (a/s) v r = 400 v, i f = 20 a 175c 25c
electrical characteristics stgb20v60df, stgp20v60df, STGW20V60DF, stgwt20v60df 10/23 docid024360 rev 3 figure 26. thermal data for igbt figure 27. thermal data for diode 10 -5 10 -4 10 -3 10 -2 10 -1 t p (s) 10 -2 10 -1 k 0.2 0.05 0.02 0.01 0.1 zth=k rthj-c =tp/t tp t single pulse =0.5 zthto2t_b
docid024360 rev 3 11/23 stgb20v60df, stgp20v60df, STGW20V60DF, stgwt20v60df test circuits 3 test circuits figure 28. test circuit for inductive load switching figure 29. gate charge test circuit figure 30. switching waveform figure 31. diode recovery time waveform am01504v1 am01505v1 am01506v1 90% 10% 90% 10% v g v ce i c td(on) to n tr(ion) td(off) toff tf tr(voff) tcross 90% 10% am01507v1 i rrm i f di/dt t rr t a t b q rr i rrm t v f dv/dt
package mechanical data stgb20v60df, stgp20v60df, STGW20V60DF, stgwt20v60df 12/23 docid024360 rev 3 4 package mechanical data in order to meet environmental requirements, st offers these devices in different grades of ecopack ? packages, depending on their level of environmental compliance. ecopack ? specifications, grade definitions and product status are available at: www.st.com. ecopack is an st trademark. table 8. to-220 type a mechanical data dim. mm min. typ. max. a4.40 4.60 b0.61 0.88 b1 1.14 1.70 c0.48 0.70 d 15.25 15.75 d1 1.27 e 10 10.40 e2.40 2.70 e1 4.95 5.15 f1.23 1.32 h1 6.20 6.60 j1 2.40 2.72 l13 14 l1 3.50 3.93 l20 16.40 l30 28.90 ? p3.75 3.85 q2.65 2.95
docid024360 rev 3 13/23 stgb20v60df, stgp20v60df, STGW20V60DF, stgwt20v60df package mechanical data figure 32. to-220 type a drawing 0015988_typea_rev_s
package mechanical data stgb20v60df, stgp20v60df, STGW20V60DF, stgwt20v60df 14/23 docid024360 rev 3 table 9. d2pak (to-263) mechanical data dim. mm min. typ. max. a 4.40 4.60 a1 0.03 0.23 b 0.70 0.93 b2 1.14 1.70 c 0.45 0.60 c2 1.23 1.36 d 8.95 9.35 d1 7.50 e 10 10.40 e1 8.50 e2.54 e1 4.88 5.28 h 15 15.85 j1 2.49 2.69 l 2.29 2.79 l1 1.27 1.40 l2 1.30 1.75 r0.4 v2 0 8
docid024360 rev 3 15/23 stgb20v60df, stgp20v60df, STGW20V60DF, stgwt20v60df package mechanical data figure 33. d2pak (to-263) drawing figure 34. d2pak footprint (a) a. all dimension are in millimeters 0079457_t 16.90 12.20 9.75 3.50 5.08 1.60 footprint
package mechanical data stgb20v60df, stgp20v60df, STGW20V60DF, stgwt20v60df 16/23 docid024360 rev 3 table 10. to-247 mechanical data dim. mm. min. typ. max. a 4.85 5.15 a1 2.20 2.60 b1.0 1.40 b1 2.0 2.40 b2 3.0 3.40 c 0.40 0.80 d 19.85 20.15 e 15.45 15.75 e 5.30 5.45 5.60 l 14.20 14.80 l1 3.70 4.30 l2 18.50 ? p 3.55 3.65 ? r 4.50 5.50 s 5.30 5.50 5.70
docid024360 rev 3 17/23 stgb20v60df, stgp20v60df, STGW20V60DF, stgwt20v60df package mechanical data figure 35. to-247 drawing 0075325_g
package mechanical data stgb20v60df, stgp20v60df, STGW20V60DF, stgwt20v60df 18/23 docid024360 rev 3 table 11. to-3p mechanical data dim. mm min. typ. max. a4.60 5 a1 1.45 1.50 1.65 a2 1.20 1.40 1.60 b 0.80 1 1.20 b1 1.80 2.20 b2 2.80 3.20 c 0.55 0.60 0.75 d 19.70 19.90 20.10 d1 13.90 e 15.40 15.80 e1 13.60 e2 9.60 e 5.15 5.45 5.75 l 19.50 20 20.50 l1 3.50 l2 18.20 18.40 18.60 ?p 3.10 3.30 q5 q1 3.80
docid024360 rev 3 19/23 stgb20v60df, stgp20v60df, STGW20V60DF, stgwt20v60df package mechanical data figure 36. to-3p drawing 8045950_a
packing mechanical data stgb20v60df, stgp20v60df, STGW20V60DF, stgwt20v60df 20/23 docid024360 rev 3 5 packing mechanical data table 12. d2pak (to-263) tape and reel mechanical data tape reel dim. mm dim. mm min. max. min. max. a0 10.5 10.7 a 330 b0 15.7 15.9 b 1.5 d 1.5 1.6 c 12.8 13.2 d1 1.59 1.61 d 20.2 e 1.65 1.85 g 24.4 26.4 f 11.4 11.6 n 100 k0 4.8 5.0 t 30.4 p0 3.9 4.1 p1 11.9 12.1 base qty 1000 p2 1.9 2.1 bulk qty 1000 r50 t 0.25 0.35 w 23.7 24.3
docid024360 rev 3 21/23 stgb20v60df, stgp20v60df, STGW20V60DF, stgwt20v60df packing mechanical data figure 37. tape figure 38. reel p1 a0 d1 p0 f w e d b0 k0 t user direction of feed p2 10 pitches cumulative tolerance on tape +/- 0.2 mm user direction of feed r bending radius top cover tape am08852v2 a d b full radius g measured at hub c n reel dimensions 40mm min. access hole at sl ot location t tape slot in core for tape start 25 mm min. width am08851v2
revision history stgb20v60df, stgp20v60df, STGW20V60DF, stgwt20v60df 22/23 docid024360 rev 3 6 revision history table 13. document revision history date revision changes 12-mar-2013 1 initial release. 16-may-2013 2 document status promoted from preliminary data to production data. added: ? new root part numbers stgb20v60df and stgp20v60df table 1 on page 1 . ? package mechanical data table 8 on page 12 , table 9 on page 14 , figure 32 on page 13 and figure 33 on page 15 . ? section 2.1: electrical characteristics (curves) on page 6 . 04-jun-2013 3 added maximum value for v ge(th) and v f in table 4: static characteristics .
docid024360 rev 3 23/23 stgb20v60df, stgp20v60df, STGW20V60DF, stgwt20v60df please read carefully: information in this document is provided solely in connection with st products. stmicroelectronics nv and its subsidiaries (?st ?) reserve the right to make changes, corrections, modifications or improvements, to this document, and the products and services described he rein at any time, without notice. all st products are sold pursuant to st?s terms and conditions of sale. purchasers are solely responsible for the choice, selection and use of the st products and services described herein, and st as sumes no liability whatsoever relating to the choice, selection or use of the st products and services described herein. no license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted under this document. i f any part of this document refers to any third party products or services it shall not be deemed a license grant by st for the use of such third party products or services, or any intellectual property contained therein or considered as a warranty covering the use in any manner whatsoev er of such third party products or services or any intellectual property contained therein. unless otherwise set forth in st?s terms and conditions of sale st disclaims any express or implied warranty with respect to the use and/or sale of st products including without limitation implied warranties of merchantability, fitness for a particular purpose (and their equivalents under the laws of any jurisdiction), or infringement of any patent, copyright or other intellectual property right. st products are not authorized for use in weapons. nor are st products designed or authorized for use in: (a) safety critical applications such as life supporting, active implanted devices or systems with product functional safety requirements; (b) aeronautic applications; (c) automotive applications or environments, and/or (d) aerospace applications or environments. where st products are not designed for such use, the purchaser shall use products at purchaser?s sole risk, even if st has been informed in writing of such usage, unless a product is expressly designated by st as being intended for ?automotive, automotive safety or medical? industry domains according to st product design specifications. products formally escc, qml or jan qualified are deemed suitable for use in aerospace by the corresponding governmental agency. resale of st products with provisions different from the statem ents and/or technical features set forth in this document shall immediately void any warranty granted by st for the st product or service described herein and shall not create or extend in any manner whatsoev er, any liability of st. st and the st logo are trademarks or register ed trademarks of st in various countries. information in this document supersedes and replaces all information previously supplied. the st logo is a registered trademark of stmicroelectronics. all other names are the property of their respective owners. ? 2013 stmicroelectronics - all rights reserved stmicroelectronics group of companies australia - belgium - brazil - canada - china - czech republic - finland - france - germany - hong kong - india - israel - ital y - japan - malaysia - malta - morocco - philippines - singapore - spain - swed en - switzerland - united kingdom - united states of america www.st.com

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